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Fused H-shaped tetrathiafulvalene–oligothiophenes as charge transport materials for OFETs and OPVs

机译:融合的H形四硫富瓦烯-低聚噻吩作为OFET和OPV的电荷传输材料

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摘要

A series of hybrid tetrathiafulvalene-oligothiophene compounds has been synthesised, where the tetrathiafulvalene unit is fused at each side to an end-capped oligothiophene chain of varying length (terthiophene, quinquithiophene and septithiophene). Each hybrid structure (1-3) has been studied by cyclic voltammetry and triple EPR-UV-Vis-NIR spectroelectrochemistry in the case of the quinquithiophene compound (2). Comparison is made with the corresponding half-units, which lack the fulvalene core and contain just one oligothiophene chain. The highest hole mobility of quinquithiophene-TTF 2 was obtained from field effect transistors (8.61 × 10-3 cm 2 V-1 s-1); its surface morphology was characterised by tapping mode atomic force microscopy and a power conversion of 2.5% was achieved from a bulk heterojunction organic solar cell device using PC71BM as the acceptor.
机译:已经合成了一系列杂四硫富富瓦烯-寡噻吩化合物,其中四硫富富瓦烯单元在每一侧与不同长度的封端的低聚噻吩链(对噻吩,喹喹噻吩和庚二噻吩)融合。对于喹噻吩化合物(2),已经通过循环伏安法和三重EPR-UV-Vis-NIR光谱电化学研究了每种杂化结构(1-3)。将其与缺少富马烯核且仅含有一个寡噻吩链的相应半单元进行比较。从场效应晶体管(8.61×10-3 cm 2 V-1 s-1)获得了喹喹噻吩-TTF 2的最高空穴迁移率;它的表面形貌通过振铃模式原子力显微镜表征,使用PC71BM作为受体的体异质结有机太阳能电池器件的功率转换为2.5%。

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